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s mhop microelectronics c orp. a STU314D symbolv ds v gs i dm e as w a p d c 10.4 -55 to 150 i d units parameter 30 16 47 vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 30v 16a 40 @ vgs=4.5v 28 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw feb,04,2009 1 details are subject to change without notice. 60 c/w thermal resistance, junction-to-ambient r ja a t c =25 c t o-252-4l d1/d2 s 1 g 1 s 2 g 2 n-ch p -ch g 1 d 1 s 1 g 2 d 2 s 2 product summary (p-channel) v dss i d r ds(on) (m ) max -30v -14a 55 @ vgs=-4.5v 34 @ vgs=-10v -30 -14 -42 20 p-channel t c =70 c a 13 -11 6.7 w t c =70 c 12 c/w thermal resistance, junction-to-case r jc a ver 1.0 16 64 green product
4 symbol min typ max units bv dss 30 v 1 i gss 10 ua v gs(th) 1 v 22 g fs 25 s v sd c iss 505 pf c oss 105 pf c rss 65 pf q g 12 nc 11 nc q gs 16.6 nc q gd 14 t d(on) 8.8 ns t r 1.5 ns t d(off) 2.3 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =15v,i d =16a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =16a v ds =5v , i d =16a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =13.7a 28 31 40 m ohm c f=1.0mhz c v ds =15v,i d =16a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.7a 0.8 1.2 v STU314D www.samhop.com.tw feb,04,2009 2 nc v ds =15v,i d =16a,v gs =4.5v 4.3 1.9 b i s maximum continuous drain-source diode forward current a 1.7 ver 1.0
symbol min typ max units bv dss -30 v -1 i gss 10 ua v gs(th) -1 v 26 g fs 17 s v sd c iss 815 pf c oss 215 pf c rss 125 pf q g 13 nc 15 nc q gs 62 nc q gd 13 t d(on) 15.5 ns t r 1.7 ns t d(off) 4.7 ns t f ns gate-drain charge v ds =-15v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-15v,i d =-14a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-14a v ds =-5v , i d =-14a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-11a 34 41 55 m ohm c f=1.0mhz c v ds =-15v,i d =-14a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.7a -0.77 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,vgs=10v.(see figure13) _ _ STU314D www.samhop.com.tw feb,04,2009 3 nc v ds =-15v,i d =-14a,v gs =-4.5v 7.3 _ -1.8 b i s maximum continuous drain-source diode forward current a -1.7 ver 1.0
STU314D www.samhop.com.tw feb,04,2009 4 n-channel ver 1.0 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 30 24 18 12 60 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5v v gs =10v v gs =3.5v v gs =4v 25 c 1512 96 3 0 0 0.7 1.4 2.1 2.8 3.5 4.2 t j=125 c -55 c 6655 44 33 22 11 1 6 12 18 24 30 1 v g s =4.5v v g s =10v 2.01.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 v g s =4.5v i d =13.7a 125 v g s =10v i d =16a 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua v gs =4.5v v ds =v g s i d =250ua
STU314D www.samhop.com.tw feb,04,2009 5 ver 1.0 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 90 75 60 45 30 15 0 2 4 6 8 10 0 25 c 125 c 75 c i d =16a 900750 600 450 300 150 0 0 5 10 15 20 25 30 ciss coss crss 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =15v i d =16a 200 100 10 1 0.1 1 10 30 100 10m s dc 1ms r ds (on) lim i t 100us v gs =10v single pulse t a =25 c 20.010.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 75 c 125 c 25 c 1 10 100 100 10 1 1000 vds=15v,id=1a vgs=10v 6 60 tr td(off ) tf td(on)
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STU314D www.samhop.com.tw feb,04,2009 6 0.00001 0.0001 0.001 0.01 0.1 10 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0.1 1 2 1 d=0.5 0.2 0.1 0.05 0.02 0.01 s ing le p uls e p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 ver 1.0
STU314D www.samhop.com.tw feb,04,2009 7 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature -vth, normalized gate-source threshold voltage -bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ver 1.0 15 9 6 3 0 0 0.7 1.4 2.1 2.8 3.5 4.2 t j=125 c 12 25 c -55 c 120 100 80 60 40 20 0 18 24 30 1 v g s =-10v v g s =-4.5v 6 12 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 150 100 125 v g s =-4.5v i d =-11a v g s =-10v i =-14a d i d =-250ua 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua 3020 15 10 50 0 0.5 1 1.5 2 2.5 3 v gs =-4v v gs =-3v v gs =-4.5v v gs =-3.5v v gs =-10v v gs =-5v 25 v gs =-6v
STU314D www.samhop.com.tw feb,04,2009 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area 10 1 0.1 0.1 100 1 10 100 10 0us r ds (o n ) l im i t 1 ms 10 m s d c v g s =10v s ingle p uls e t c=25 c ver 1.0 120 100 80 60 40 20 0 2 4 6 8 10 0 i d =-14a 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =-15v i d =-14a 1200 1000 800 600 400 200 0 c is s c os s c rs s 20.010.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 125 c 25 c 75 c 0 5 10 15 20 25 30 1 10 100 100 10 1 1000 vds=-15v,id=-1a vgs=-10v 6 60 tr td(off ) tf td(on)
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STU314D www.samhop.com.tw feb,04,2009 9 0.00001 0.0001 0.001 0.01 0.1 10 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0.1 1 2 1 d=0.5 0.2 0.1 0.05 0.02 0.01 s ing le p uls e p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 ver 1.0
STU314D www.samhop.com.tw feb,04,2009 10 package outline dimensions to-252-4l 1 2 3 e1 d e b2 d1 l3 l4 b1 b e 4 5 h c a detail "a" 1 l l1 a1 l2 detail "a" 0.127 0.440 0.680 0.787 6.000 9.400 0.508 ref. 0.890 1.270 l4 0.640 1.270 bsc b1b2 6.400 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 5.200 a 2.200 2.387 max min 0.000 0.635 5.210 5.460 c 0.450 0.584 d 6.223 d1 e e 10.400 l h 1.010 1 0 7 10 ref. max min millimeters inches 0.087 0.094 0.000 0.005 0.017 0.027 0.025 0.031 0.205 0.215 0.018 0.023 0.236 0.245 0.205 0.217 0.252 0.265 0.050 bsc 0.370 0.409 0.055 0.070 0.108 0.020 0.035 0.050 0.025 0.040 0 7 10 ref. symbols e1 4.400 5.004 0.173 0.197 ref. ref. ver 1.0
STU314D www.samhop.com.tw feb,04,2009 11 to-252-4l carrier tape to-252-4l tape and reel data to-252-4l reel feed direction e e2 e1 d0 p0 p2 p1 d1 b b a a a0 max 6 b0 max 4 k0 t section a - a section b - b unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 2 0.1 2 0.1 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 t n m w g v r s k h ver 1.0

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